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尹龙祥  高级工程师  


                                        
研究方向：

                                        
所属部门：智能计算机研究中心

                                        
导师类别：

                                        
联系方式：yinlongxiang@ict.ac.cn

                                        
个人网页：

                                    

                                

                            


                        

                    

                

            

            

                

                    

                        

                            

                                
简       历：

                                

                                    
2021年9月 — 今：中国科学院计算技术研究所，高级工程师
2018年7月 — 2021年9月：中国科学院计算技术研究所，助理研究员
2012年9月 — 2018年7月：北京大学，信息科学技术学院，博士生
2008年9月 — 2012年7月：西北工业大学，软件与微电子学院，本科生

                                

                            

                            

                                
主要论著：

                                

                                    
期刊文章: 
[1] Longxiang Yin, Gang Du and Xiaoyan Liu, “Impact of Ambient Temperature on the Self-heating Effects in FinFETs,” Journal of Semiconductors, vol. 39, no. 9, pp. 094011, 2018. 
[2] Longxiang Yin, Lei Shen, Shaoyan Di, Gang Du and Xiaoyan Liu, “Investigation of thermal effects on FinFETs in the quasi-ballistic regime,” Japanese Journal of Applied Physics, vol. 04FD14, no. 57, pp. 4F-14F, 2018. 
[3] Yin Longxiang, Shen Lei, Jiang Hai, Du Gang and Liu Xiaoyan. “Impact of self-heating effects on nanoscale Ge p-channel FinFETs with Si substrate,” Sci. China Inf. Sci., Volume 61, Issue 6, pp. 062401:1-062401:9, 2018 
[4] Ran Cheng, Longxiang Yin, Heng Wu, Xiao Yu, Yanyan Zhang, Zejie Zheng, Wangran Wu, Bing Chen, Peide D. Ye, Xiaoy an Liu and Yi Zhao. ”Experimental Investigation of Ballistic Carrier Transport for Sub-100nm Ge n-MOSFETs,” IEEE Electron Device Lett., Volume 38, Issue 4, pp. 434- 437, 2017. 
会议文章： 
[1] Xiaoming Chen, Longxiang Yin, Bosheng Liu and Yinhe Han, “Merging Everything (ME): A Unified FPGA Architecture Based on Logic-in-Memory Techniques,” in Proc. Of 2019 ACM/IEEE Design Automation Conference (DAC),2019, pp. 1-2. (CCF-A类) 
[2] Longxiang Yin, Minquan Fang, Lang Zeng, Lilun Zhang, Gang Du and Xiaoyan Liu. “Accelerated 3D full-band self-consistent ensemble Monte Carlo device simulation utilizing intel MIC co-processors on tianhe II,” In Proc. of 2015 International Workshop on Computational Electronics (IWCE), 2015, pp. 1-4. 
[3] Longxiang Yin, Hai Jiang, Lei Shen, Juncheng Wang, Gang Du and Xiaoyan Liu, “Investigation of local heating effect for 14nm Ge pFinFETs based on Monte Carlo method,” in Proc. of 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2016, pp. 1-2. 
[4] Hai Jiang, Longxiang Yin, Yun Li, Nuo Xu, Kai Zhao, Yandong He, Gang Du, Xiaoyan Liu and Xing Zhang, “Comprehensive understanding of hot carrier degradation in multiple-fin SOI FinFETs,” in Proc. of 2015 IEEE International Reliability Physics Symposium (IRPS), 2015, pp. 1-6.  
[5] Yun Li, Shaoyan Di, Hai Jiang, Peng Huang, Yijiao Wang, Zhiyuan Lun, Lei Shen, Longxiang Yin, Xing Zhang, Gang Du and Xiaoyan Liu, “Insight into PBTI in InGaAs nanowire FETs with Al2O3 and LaAlO3 gate dielectrics,” in Proc. of 2016 IEEE International Electron Device Meeting (IEDM), 2016, pp. 36.5.1-36.5.4.

                                

                            

                            

                                
科研项目：

                                

                                    
国家自然科学基金重大项目：《面向对象体系结构设计范式》，2021/1-2025/12,主要参与人

                                

                            

                            

                                
获奖及荣誉：

                                

                                    
2020年度计算所优秀研究人员